Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2010M Datenblatt(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE2010M Datenblatt(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 5 page ACE2010M P-Channel -100V MOSFET VER 1.1 3 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -80 V, VGS = 0 V -1 uA VDS = -80 V, VGS = 0 V, TJ = 55°C -10 On-State Drain Current ID(on) VDS =- 5 V, VGS = -10 V -20 A Drain-Source On-Resistance rDS(on) VGS = -10 V, ID = -1 A 295 mΩ VGS = -4.5 V, ID = -1 A 590 Forward Transconductance gfs VDS = -15 V, ID = -28 A 8 S Diode Forward Voltage VSD IS = -2.5A, VGS = 0 V -0.7 V Dynamic Total Gate Charge Qg VDS = -30 V, VGS = -4.5 V, ID = -28 A 18 nC Gate-Source Charge Qgs 5 Gate-Drain Charge Qgd 2 Turn-On Delay Time td(on) VDD = -30 V, RL = 30 Ω , ID = -1 A VGEN = -10 V, RGEN = 6 Ω 8 nS Rise Time tr 10 Turn-Off Delay Time td(off) 35 Fall Time tf 12 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Packing Information TO-252 |
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