Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2390M Datenblatt(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE2390M Datenblatt(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 7 page ACE2390M N-Channel 150-V MOSFET VER 1.1 3 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V 1 uA VDS = 120V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V 5 A Drain-Source On-Resistance rDS(on) VGS = 10 V, ID = 1.1 A 0.7 mΩ VGS = 4.5 V, ID = 0.8 A 1.2 Forward Transconductance gfs VDS = 15 V, ID = 1.1 A 5 S Diode Forward Voltage VSD IS = 0.8 A, VGS = 0 V 0.75 V Dynamic Total Gate Charge Qg VDS = 75 V, VGS = 4.5 V, ID = 1.1 A 3.5 nC Gate-Source Charge Qgs 1.3 Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) VDD = 75 V, RL = 75 Ω , ID = 1.1 A, VGEN = 10 V, RGEN = 6 Ω 4.4 nS Rise Time tr 4.9 Turn-Off Delay Time td(off) 18.4 Fall Time tf 4.9 Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f =1 MHz 356 pF Output Capacitance Coss 38 ReverseTransfer Capacitance Crss 17 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. |
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