Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2398M Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2398M Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE2398M N-Channel 60-V MOSFET VER 1.1 1 Description ACE2398M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a TA=25℃ ID 2.2 A TA=70℃ 1.7 Pulse Drain Current b IDM 10 A Continuous Source Current (Diode Conduction) a IS 1.9 A Power Dissipation a TA=25℃ PD 1.3 W TA=70℃ 0.8 Operating Temperature / Storage Temperature TJ/TSTG -55/150 OC *1 Pw ≦ 10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t <= 10 sec RθJA 100 OC/W Steady State 166 |
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