SPD02N60C3 datasheet(1/12 Pages) INFINEON

Teilenummer	SPD02N60C3

Bauteilbeschribung	Cool MOS Power Transistor

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Hersteller	INFINEON [Infineon Technologies AG]

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2003-10-02

Page 1

SPD02N60C3

SPU02N60C3

Final data

Cool MOS™ Power Transistor

VDS @ Tjmax

650

V

RDS(on)

3

Ω

ID

1.8

A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

P-TO252

P-TO251

Type

Package

Ordering Code

SPD02N60C3

P-TO252

Q67040-S4420

SPU02N60C3

P-TO251

-

Marking

02N60C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

1.8

1.1

A

Pulsed drain current, t

p limited by Tjmax

ID puls

5.4

Avalanche energy, single pulse

ID = 1.35 A, VDD = 50 V

EAS

50

mJ

Avalanche energy, repetitive tAR limited by Tjmax1)

ID = 1.8 A, VDD = 50 V

EAR

0.07

Avalanche current, repetitive tAR limited by Tjmax IAR

1.8

A

Gate source voltage static

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

25

W

Operating and storage temperature

Tj , Tstg

-55... +150

°C

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SPD02N60C3 Datenblatt(PDF) 1 Page - Infineon Technologies AG

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