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SPI11N65C3 Datenblatt(PDF) 4 Page - Infineon Technologies AG

Teilenummer SPI11N65C3
Bauteilbeschribung  Cool MOS??Power Transistor
Download  14 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI11N65C3 Datenblatt(HTML) 4 Page - Infineon Technologies AG

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2003-0
8-15
Page 4
SPP11N65C3, SPA11N65C3
SPI11N65C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
IS
TC=25°C
-
-
11
A
Inverse diode direct current,
pulsed
ISM
-
-
33
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=480V, IF=IS ,
diF/dt=100A/µs
-
400
600
ns
Reverse recovery charge
Qrr
-
6
-
µC
Peak reverse recovery current
Irrm
-
41
-
A
Peak rate of fall of reverse
recovery current
dirr/dt
Tj=25°C
-
1200
-
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
Rth1
0.015
0.15
K/W
Cth1
0.0001878
0.0001878 Ws/K
Rth2
0.03
0.03
Cth2
0.0007106
0.0007106
Rth3
0.056
0.056
Cth3
0.000988
0.000988
Rth4
0.197
0.194
Cth4
0.002791
0.002791
Rth5
0.216
0.413
Cth5
0.007285
0.007401
Rth6
0.083
2.522
Cth6
0.063
0.412
SPP_B
SPP_B
External Heatsink
Tj
Tcase
Tamb
C th1
Cth2
Rth1
Rth,n
Cth,n
Ptot (t)


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