Cascadable Amplifier

10 to 1500 MHz

Rev. V3

A29-1 / SMA29-1

1

1

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1

Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

10-1600

10-1500

10-1500

Small Signal Gain (min)

dB

9.0

8.5

7.5

Gain Flatness (max)

dB

±0.2

±0.5

±1.0

Reverse Isolation

dB

14

Noise Figure (max)

dB

5.5

6.5

7.0

Power Output

@ 1 dB comp. (min)

dBm

22.0

20.0

19.0

IP3

dBm

+32

IP2

dBm

+49

Second Order Harmonic IP

dBm

+57

VSWR Input / Output (max)

1.6:1 / 1.6:1

1.9:1 / 1.9:1

2.0:1 / 2.0:1

DC Current @ 15 Volts (max)

mA

90

94

99

Features

 HIGH OUTPUT POWER: +22 dBm (TYP.)

 HIGH THIRD ORDER I.P.: +32 dBm (TYP.)

Description

The A29-1 RF amplifier is a discrete thin film hybrid design, which

incorporates the use of thin film manufacturing processes for

accurate performance and high reliability.

This single stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband frequency

range. An active DC biasing network is used for temperature-

stable performance, in addition to an RF Choke, used for power

supply decoupling.

Both TO-8 and Surface Mount packages are hermetically sealed,

and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A29-1

TO-8

SMA29-1

Surface Mount

CA29-1

SMA Connectorized **

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+17 V

Continuous Input Power

15.5 dBm

Short Term Input power

(1 minute max.)

100 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

+125ºC

Parameter

Rating

100ºC/W

0.966 W

Junction Temperature Rise

+96ºC

** The connectorized version is not RoHs compliant.