Datenblatt-Suchmaschine für elektronische Bauteile |
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TC62D902FG Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
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TC62D902FG Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
5 / 19 page TC62D902FG 2014-10-01 5 9. Absolute Maximum Ratings (Ta = 25°C) Note1: The voltage value is a ground standard. Note2: Junction-to-ambient thermal resistance is highly application and board-layout dependent. Note3: When ambient temperature is 25°C or more. Every time ambient temperature exceeded 1°C, please decrease 1/Rth(j-a). Topr : the ambient air temperature of IC under operation. Tj : It is the junction temperature of IC under operation. Tj maximum is restricted by the TSD (thermal shutdown) circuit. Tj maximum recommends carrying out a thermal design within the limit of a 120 °C Cautions on absolute maximum ratings The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. The value of even one parameter of the absolute maximum ratings should not be exceeded under any circumstances. This device does not have over-voltage protection. Therefore, the device is damaged if a voltage exceeding its rated maximum is applied. All voltage ratings including supply voltages must always be followed. The section on the protection features on the latter page should also be referred to. Characteristics Symbol Rating Note1 Unit Remark S u ppl y v o l t a g e VCC − 0.3~ 26 V O R E F te r m i n a l v o l ta g e VOREF − 0.3~ 6.0 V V S E N t e r m i n a l v o l t a ge VVSEN − 0.7~ 6.0 V V I N t er m i na l v o l ta g e VVIN − 0.3~ 6.0 V B L D R t e r m i n al v o l t ag e VBLDR − 0.3~ VCC V I S EN t e r m i n al v o l t ag e VISEN − 0.3~ 6.0 V G A T E t e r mi n a l v o l t a g e VGATE − 0.3~VCC V O p e r a ti n g te m p e r a t u r e Topr − 40~85 °C S t o r a g e t em p er a t u r e Tstg − 55~150 °C T h er m a l r es i s t a nc e Rth(j-a) 105 °C/W Note2 P ow e r d i ssi pa t i on PD 1.19 W Note3 |
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