LM3414, LM3414HV

SNVS678F – JUNE 2010 – REVISED NOVEMBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

LM3414

–0.3

42

VIN to GND

V

LM3414HV

–0.3

65

LM3414

45 (500 ms)

VIN to GND (Transient)

V

LM3414HV

67 (500 ms)

LM3414

–0.3

42

LX to PGND

V

LM3414HV

–0.3

65

LM3414

–3 (2 ns)

45 (500 ms)

LX to PGND (Transient)

V

LM3414HV

–3 (2 ns)

67 (500 ms)

FS, IADJ to GND

–0.3

5

V

DIM to GND

–0.3

6

V

Storage Temperature

–65

125

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE

UNIT

WSON PACKAGE

±2000

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-

±750

SOIC PACKAGE

±2000

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-

±750

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

The human body model is a 100pF capacitor discharged through a 1.5 k

Ω resistor into each pin.

(3)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

LM3414

4.5

42

V

LM3414HV

4.5

65

Junction temperature

–40

125

°C

4

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