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TPD7102F Datenblatt(PDF) 11 Page - Toshiba Semiconductor

Teilenummer TPD7102F
Bauteilbeschribung  1 channel High-Side N channel Power MOSFET Gate Driver
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD7102F Datenblatt(HTML) 11 Page - Toshiba Semiconductor

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TPD7102F
2013-11-01
11
0
10
20
30
40
-80
-40
0
40
80
120
160
0
10
20
30
40
0
4
8
12
16
20
0
4
8
12
16
20
-80
-40
0
40
80
120
160
0
4
8
12
16
20
0
4
8
12
16
20
0.0
1.0
2.0
3.0
-80
-40
0
40
80
120
160
0.0
1.0
2.0
3.0
0
4
8
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Supply voltage VDD[V]
ΔVOUT1H - VDD
Tj=25°C
VIN=VENB=5V
Supply voltage VDD[V]
VOUT2H - VDD
Tj=25°C
VIN=VENB=5V
Supply voltage VDD[V]
ΔVOUT2H - VDD
Tj=25°C
VIN=VENB=5V
Junction temperature Tj[°C]
ΔVOUT1H - Tj
VDD=12V
VIN=VENB=5V
Junction temperature Tj[°C]
VOUT2H - Tj
VDD=12V
VIN=VENB=5V
Junction temperature Tj[°C]
ΔVOUT2H - Tj
VDD=12V
VIN=VENB=5V


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