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1SS424 Datenblatt(PDF) 1 Page - Toshiba Semiconductor

Teilenummer 1SS424
Bauteilbeschribung  TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

1SS424 Datenblatt(HTML) 1 Page - Toshiba Semiconductor

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1SS424
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS424
High-Speed Switching Applications
Low forward voltage
: VF (3) = 0.50 V (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
30
V
Reverse voltage
VR
20
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
200
mA
Surge current (10 ms)
IFSM
1
A
Power dissipation
P *
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1 mA
0.18
VF (2)
IF = 5 mA
0.23
Forward voltage
VF (3)
IF = 200 mA
0.42
0.5
V
IR (1)
VR = 10 V
30
Reverse current
IR (2)
VR = 20 V
50
μA
Total capacitance
CT
VR = 0, f = 1 MHz
20
pF
Equivalent Circuit (Top View)
Marking
S8
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 1.4 mg (typ.)
Unit: mm
Start of commercial production
2004-08


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