Datenblatt-Suchmaschine für elektronische Bauteile |
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1SS424 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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1SS424 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS424 2014-03-01 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS424 High-Speed Switching Applications Low forward voltage : VF (3) = 0.50 V (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 30 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 300 mA Average forward current IO 200 mA Surge current (10 ms) IFSM 1 A Power dissipation P * 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1 mA ― 0.18 ― VF (2) ― IF = 5 mA ― 0.23 ― Forward voltage VF (3) ― IF = 200 mA ― 0.42 0.5 V IR (1) ― VR = 10 V ― ― 30 Reverse current IR (2) ― VR = 20 V ― ― 50 μA Total capacitance CT ― VR = 0, f = 1 MHz ― 20 ― pF Equivalent Circuit (Top View) Marking S8 JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 1.4 mg (typ.) Unit: mm Start of commercial production 2004-08 |
Ähnliche Teilenummer - 1SS424_14 |
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Ähnliche Beschreibung - 1SS424_14 |
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