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TS5A3166DBVR Datenblatt(PDF) 3 Page - Texas Instruments

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Teilenummer TS5A3166DBVR
Bauteilbeschribung  SPST Analog Switch
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TS5A3166DBVR Datenblatt(HTML) 3 Page - Texas Instruments

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3
4
5
2
1
GND
COM
NO
IN
V+
1
2
3
4
5
NO
COM
GND
IN
V+
3
TS5A3166
www.ti.com
SCDS186D – FEBRUARY 2005 – REVISED FEBRUARY 2016
Product Folder Links: TS5A3166
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
5 Pin Configuration and Functions
DBV and DCK Packages
5-Pin SOT-23 and SC-70
Top View
YZP Package
5-Pin DSBGA
Bottom View
Pin Functions
PIN
TYPE
DESCRIPTION
NO.
NAME
1
NO
I/O
Normally opened port
2
COM
I/O
Common port
3
GND
GND
Ground
4
IN
I
Digital control pin to connect COM to NO
5
V+
Power
Power Supply
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3)
All voltages are with respect to ground, unless otherwise specified.
(4)
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5)
This value is limited to 5.5 V maximum.
(6)
Pulse at 1-ms duration < 10% duty cycle.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
V+
Supply voltage(3)
–0.5
6.5
V
VNO
VCOM
Analog voltage(3)(4)(5)
–0.5
V+ + 0.5
V
IK
Analog port diode current
VNO, VCOM < 0
–50
mA
INO
ICOM
ON-state switch current
VNO, VCOM = 0 to V+
–200
200
mA
ON-state peak switch current(6)
–400
400
VI
Digital input voltage(3)(4)
–0.5
6.5
V
IIK
Digital clamp current
VI < 0
–50
mA
I+
Continuous current through V+
100
mA
IGND
Continuous current through GND
–100
mA
Tstg
Storage temperature
–65
150
°C
Tj
Junction temperature
150
°C


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