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1N4448 Datenblatt(PDF) 1 Page - Nanjing International Group Co

Teilenummer 1N4448
Bauteilbeschribung  Silicon Epitaxial Planar Switching Diode
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Hersteller  DGNJDZ [Nanjing International Group Co]
Direct Link  http://www.dgnjdz.com/
Logo DGNJDZ - Nanjing International Group Co

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1N4448
Silicon Epitaxial Planar Switching Diode
Applications
• High-speed switching
This diode is also available in MiniMELF case with
the type designation LL4448.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
Average Rectified Forward Current
IF(AV)
150
mA
Surge Forward Current at t < 1 s
IFSM
500
mA
Power Dissipation
Ptot
500
1)
mW
Junction Temperature
Tj
200
O
C
Storage Temperature Range
Tstg
- 65 to + 200
O
C
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 5 mA
at IF = 100 mA
VF
0.62
-
0.72
1
V
Reverse Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 OC
IR
IR
IR
-
-
-
25
5
50
nA
µA
µA
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
100
-
V
Capacitance
at VR = 0, f = 1 MHz
Ctot
-
4
pF
Reverse Recovery Time
at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
trr
-
4
ns
Max. 3.9
Max. 1.9
Glass Case DO-35
Max. 0.5
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
Dimensions in mm
Black
Black


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