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1N4448 Datenblatt(PDF) 1 Page - Nanjing International Group Co |
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1N4448 Datenblatt(HTML) 1 Page - Nanjing International Group Co |
1 / 3 page 1N4448 Silicon Epitaxial Planar Switching Diode Applications • High-speed switching This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Average Rectified Forward Current IF(AV) 150 mA Surge Forward Current at t < 1 s IFSM 500 mA Power Dissipation Ptot 500 1) mW Junction Temperature Tj 200 O C Storage Temperature Range Tstg - 65 to + 200 O C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 5 mA at IF = 100 mA VF 0.62 - 0.72 1 V Reverse Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC IR IR IR - - - 25 5 50 nA µA µA Reverse Breakdown Voltage at IR = 100 µA V(BR)R 100 - V Capacitance at VR = 0, f = 1 MHz Ctot - 4 pF Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns Max. 3.9 Max. 1.9 Glass Case DO-35 Max. 0.5 Min. 27.5 Min. 27.5 XXX Cathode Band Part No. Dimensions in mm Black Black |
Ähnliche Teilenummer - 1N4448 |
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Ähnliche Beschreibung - 1N4448 |
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