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BC557A Datenblatt(PDF) 2 Page - Diotec Semiconductor

Teilenummer BC557A
Bauteilbeschribung  Si-Epitaxial PlanarTransistors
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Hersteller  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC557A Datenblatt(HTML) 2 Page - Diotec Semiconductor

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1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
9
01.11.2003
General Purpose Transistors
BC 556 ... BC 559
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung
- I
C = 100 mA, - IB = 5 mA
- V
BEsat
1 V
Base-Emitter voltage – Basis-Emitter-Spannung
- V
CE = 5 V, - IC = 2 mA
- V
BE
580 mV
660 mV
700 mV
Collector-Emitter cutoff current – Kollektorreststrom
- V
CE = 60 V
BC 556
- I
CE0
0.1
:A
- V
CE = 40 V
BC 557
- I
CE0
0.1
:A
- V
CE = 25 V
BC 558
- I
CE0
0.1
:A
- V
CE = 25 V
BC 559
- I
CE0
0.1
:A
Gain-Bandwidth Product – Transitfrequenz
- V
CE = 5 V, - IC = 10 mA, f = 100 MHz
f
T
150 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB = 0.5 V, f = 1 MHz
C
EB0
9 pF
Noise figure – Rauschzahl
- V
CE = 5 V, - IC = 200
:A
BC 556...
F
2 dB
10 dB
R
G = 2 k
S f = 1 kHz,
BC 558
)f = 200 Hz
BC 559
F
1 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 546 ... BC 549
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 556A
BC 557A
BC 558A
BC 556B
BC 557B
BC 558B
BC 559B
BC 557C
BC 558C
BC 559C


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