Datenblatt-Suchmaschine für elektronische Bauteile |
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BC639 Datenblatt(PDF) 2 Page - Nanjing International Group Co |
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BC639 Datenblatt(HTML) 2 Page - Nanjing International Group Co |
2 / 3 page BC635 / BC637 / BC639 Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 2 V, IC = 5 mA at VCE = 2 V, IC = 150 mA at VCE = 2 V, IC = 500 mA BC635 BC637 / BC639 hFE hFE hFE hFE 40 40 40 25 - 250 160 - - - - - Collector Cutoff Current at VCB = 30 V ICBO - 100 nA Emitter Cutoff Current at VEB = 5 V IEBO - 100 nA Collector Base Breakdown Voltage at IC = 100 µA BC635 BC637 BC639 V(BR)CBO 45 60 100 - - - V Collector Emitter Breakdown Voltage at IC = 10 mA BC635 BC637 BC639 V(BR)CEO 45 60 80 - - - V Emitter Base Breakdown Voltage at IE = 10 µA V(BR)EBO 5 - V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA VCE(sat) - 0.5 V Base Emitter Voltage at VCE = 2 V, IC = 500 mA VBE - 1 V Gain Bandwidth Product at VCE = 5 V, IC = 50 mA, f = 100 MHz fT 100 - MHz |
Ähnliche Teilenummer - BC639 |
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Ähnliche Beschreibung - BC639 |
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