Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

MTB020N06KH8 Datenblatt(PDF) 2 Page - Cystech Electonics Corp.

Teilenummer MTB020N06KH8
Bauteilbeschribung  N-Channel Enhancement Mode Power MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB020N06KH8 Datenblatt(HTML) 2 Page - Cystech Electonics Corp.

  MTB020N06KH8 Datasheet HTML 1Page - Cystech Electonics Corp. MTB020N06KH8 Datasheet HTML 2Page - Cystech Electonics Corp. MTB020N06KH8 Datasheet HTML 3Page - Cystech Electonics Corp. MTB020N06KH8 Datasheet HTML 4Page - Cystech Electonics Corp. MTB020N06KH8 Datasheet HTML 5Page - Cystech Electonics Corp. MTB020N06KH8 Datasheet HTML 6Page - Cystech Electonics Corp. MTB020N06KH8 Datasheet HTML 7Page - Cystech Electonics Corp. MTB020N06KH8 Datasheet HTML 8Page - Cystech Electonics Corp. MTB020N06KH8 Datasheet HTML 9Page - Cystech Electonics Corp. Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
CYStech Electronics Corp.
Spec. No. : C103H8
Issued Date : 2016.04.20
Revised Date :
Page No. : 2/ 10
MTB020N06KH8
CYStek Product Specification
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
(Note 1)
VDS
60
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @TC=25
°C, VGS=10V
(Note 5)
42
Continuous Drain Current @TC=100
°C, VGS=10V
(Note 5)
ID
29.7
Continuous Drain Current @TA=25
°C, VGS=10V
(Note 2)
7.8
Continuous Drain Current @TA=70
°C, VGS=10V
(Note 2)
IDSM
6.2
Pulsed Drain Current @ VGS=10V
(Note 3)
IDM
168
Avalanche Current
(Note 3)
IAS
8
A
Single Pulse Avalanche Energy @ L=2mH, ID=8A, VDD=15V
(Note 4)
EAS
64
Repetitive Avalanche Energy
(Note 3)
EAR
7
mJ
TC=25
°C
(Note 1)
71
TC=100
°C
(Note 1)
PD
35.5
TA=25
°C
(Note 2)
2.0
Power Dissipation
TA=70
°C
(Note 2)
PDSM
1.3
W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
2.1
Thermal Resistance, Junction-to-ambient, max (Note 2)
RθJA
62
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C, and the maximum temperature of 175
°
C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C.
4. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of VDD=15V,
ID=6A, L=1mH, VGS=10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
.


Ähnliche Teilenummer - MTB020N06KH8

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Cystech Electonics Corp...
MTB020N06KE3 CYSTEKEC-MTB020N06KE3 Datasheet
403Kb / 8P
   N-Channel Enhancement Mode Power MOSFET
More results

Ähnliche Beschreibung - MTB020N06KH8

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Microsemi Corporation
MSAFA75N10C MICROSEMI-MSAFA75N10C Datasheet
83Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
logo
GTM CORPORATION
GP9973 GTM-GP9973 Datasheet
335Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE20N03 GTM-GE20N03 Datasheet
296Kb / 5P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G2304A GTM-G2304A Datasheet
371Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G111K GTM-G111K Datasheet
366Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G138 GTM-G138 Datasheet
324Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G301K GTM-G301K Datasheet
296Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
G2N7002K GTM-G2N7002K Datasheet
368Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE85T03 GTM-GE85T03 Datasheet
246Kb / 4P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE88L02 GTM-GE88L02 Datasheet
253Kb / 5P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GE40N03 GTM-GE40N03 Datasheet
251Kb / 5P
   N-CHANNEL ENHANCEMENT MODE POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com