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2SD1475 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD1475
Bauteilbeschribung  Good Linearity of hFE
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1475 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
1
isc Silicon NPN Power Transistor
2SD1475
DESCRIPTION
·
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
·
Good Linearity of hFE
APPLICATIONS
·
Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Peak
1
A
PC
Collector Power Dissipation
@ TC=25℃
35
W
Collector Power Dissipation
@ Ta=25℃
2
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150


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