Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1475 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1475 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2SD1475 DESCRIPTION · Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) · Good Linearity of hFE APPLICATIONS · Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak 1 A PC Collector Power Dissipation @ TC=25℃ 35 W Collector Power Dissipation @ Ta=25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Ähnliche Teilenummer - 2SD1475 |
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Ähnliche Beschreibung - 2SD1475 |
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