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4N35-G Datenblatt(PDF) 3 Page - CT Micro International Corporation

Teilenummer 4N35-G
Bauteilbeschribung  DC Input 6-Pin Phototransistor Optocoupler
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Hersteller  CTMICRO [CT Micro International Corporation]
Direct Link  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

4N35-G Datenblatt(HTML) 3 Page - CT Micro International Corporation

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CT Micro
Rev 2
Proprietary & Confidential
Page 3
Apr, 2016
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
VF
Forward voltage
IF=10mA
1.24
1.4
V
IR
Reverse Current
VR = 6V
-
-
5
µA
CIN
Input Capacitance
f= 1MHz
-
45
-
pF
Detector Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVCEO
Collector-Emitter Breakdown
IC= 0.1mA
80
-
-
V
BVECO
Emitter-Collector Breakdown
IE= 0.1mA
7
-
-
V
BVCBO
Collector-Base Breakdown
IC= 0.1mA
80
-
-
V
BVEBO
Emitter-Base Breakdown
IE= 0.1mA
7
-
-
V
ICEO
Collector-Emitter
Dark Current
4N25,4N26,4N27,4N28
H11A1,A2,A3,A4,A5
VCE= 10V, IF=0mA
-
-
50
nA
4N35,4N36,4N37,4N38
VCE=60V, IF=0mA
-
-
50
nA
ICBO
Collector-Base Dark Current
VCB= 10V, IF=0mA
-
-
20
nA
Transfer Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CTR
Current
Transfer
Ratio
4N35
IF= 10mA, VCE= 10V
100
-
-
%
4N25,4N26, 4N38,
H11A2, H11A3
20
-
-
4N27, 4N28, H11A4
10
-
-
H11A1
50
-
-
H11A5
30
-
-
4N36
IF= 2mA, VCE= 5V
130
-
260
4N37
200
-
400
VCE(SAT)
Collector-E
mitter
Saturation
Voltage
4N25,4N26,
4N27,4N28
IF= 50mA, IC= 2mA
-
-
0.5
V
4N35,4N36,4N37
IF= 10mA, IC= 0.5mA
-
-
0.3
H11A1,H11A2,
H11A3,H11A4,H11A5
-
-
0.4
4N38
IF= 20mA, IC= 4mA
-
-
1.0


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