Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK808 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK808 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK808 ·ELECTRICAL CHARACTERISTICS (T C=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 800 V VGS(th) Gate Threshold Voltage VDS=25 VGS; ID=1mA 1.0 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 0.7A 4.7 7.0 Ω IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ±1 uA IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 0.1 mA ton Turn-on time VGS=10V;ID=0.7A; RL=285Ω 35 ns toff Turn-off time 110 ns PDF pdfFactory Pro www.fineprint.cn |
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Ähnliche Beschreibung - 2SK808 |
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