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IRF7343 Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRF7343
Bauteilbeschribung  HEXFET Power MOSFET
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7343 Datenblatt(HTML) 2 Page - International Rectifier

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IRF7343
2
www.irf.com
… Surface mounted on FR-4 board, t ≤ 10sec.
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
55
VGS = 0V, ID = 250µA
P-Ch -55
VGS = 0V, ID = -250µA
N-Ch
— 0.059
Reference to 25°C, ID = 1mA
P-Ch
— 0.054
Reference to 25°C, ID = -1mA
— 0.043 0.050
VGS = 10V, ID = 4.7A
„
— 0.056 0.065
VGS = 4.5V, ID = 3.8A
„
— 0.095 0.105
VGS = -10V, ID = -3.4A
„
— 0.150 0.170
VGS = -4.5V, ID = -2.7A
„
N-Ch 1.0
VDS = VGS, ID = 250µA
P-Ch -1.0
VDS = VGS, ID = -250µA
N-Ch 7.9
VDS = 10V, ID = 4.5A
„
P-Ch 3.3
VDS = -10V, ID = -3.1A
„
N-Ch
2.0
VDS = 55V, VGS = 0V
P-Ch
-2.0
VDS = -55V, VGS = 0V
N-Ch
25
VDS = 55V, VGS = 0V, TJ = 55°C
P-Ch
-25
VDS = -55V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
N-P
––
±100
VGS = ±20V
N-Ch
24
36
P-Ch
26
38
N-Ch
2.3
3.4
P-Ch
3.0
4.5
N-Ch
7.0
10
P-Ch
8.4
13
N-Ch
8.3
12
P-Ch
14
22
N-Ch
3.2
4.8
P-Ch
10
15
N-Ch
32
48
P-Ch
43
64
N-Ch
13
20
P-Ch
22
32
N-Ch
740
P-Ch
690
N-Ch
190
pF
P-Ch
210
N-Ch
71
P-Ch
86
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
V
S
µA
nC
ns
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
„
P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 16Ω
„
P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0Ω,
RD = 16Ω
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
N-Ch
P-Ch
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
2.0
P-Ch
-2.0
N-Ch
38
P-Ch
-27
N-Ch
0.70
1.2
TJ = 25°C, IS = 2.0A, VGS = 0V
ƒ
P-Ch
-0.80 -1.2
TJ = 25°C, IS = -2.0A, VGS = 0V
ƒ
N-Ch
60
90
P-Ch
54
80
N-Ch
120
170
P-Ch
85
130
Source-Drain Ratings and Characteristics
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)

VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF =2.0A, di/dt = 100A/µs
P-Channel
„
TJ = 25°C, IF = -2.0A, di/dt = 100A/µs
‚ N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Notes:
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ N-Channel Starting T
J = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
nA


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