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1N3070 Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer 1N3070
Bauteilbeschribung  Small Signal Diode
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
1N3070, Rev. A
Small Signal Diode
Absolute Maximum Ratings * T
A = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
200
V
IF(AV)
Average Rectified Forward Current
500
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
TSTG
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
175
°C
Symbol
Parameter
Value
Units
PD
Power Dissipation
500
mW
RθJA
Thermal Resistance, Junction to Ambient
300
°C
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VR
Breakdown Voltage
IR = 100µA
200
V
VF
Forward Voltage
IF = 100mA
1.0
V
IR
Reverse Leakage
VR = 175V
VR = 175V, TA = 150°C
100
100
nA
µA
CT
Total Capacitance
VR = 0V, f = 1.0MHz
5
pF
trr
Reverse Recovery Time
IF = IR = 30mA, RL = 100Ω
50
ns
1N3070
DO-35
COLOR BAND DENOTES CATHODE


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