Datenblatt-Suchmaschine für elektronische Bauteile |
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6N45 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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6N45 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 6N45 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 450 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.0 4.0 V VSD Diode Forward On-Voltage IS=3A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=3A 1.25 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 360V; VGS= 0 10 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 1500 pF Crss Reverse Transfer Capacitance 200 Coss Output Capacitance 250 tr Rise Time VGS=10V; ID=3A; VDD=250V; RL=50Ω 40 ns td(on) Turn-on Delay Time 15 tf Fall Time 60 td(off) Turn-off Delay Time 190 PDF pdfFactory Pro www.fineprint.cn |
Ähnliche Teilenummer - 6N45 |
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Ähnliche Beschreibung - 6N45 |
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