6N45 datasheet(2/2 Pages) ISC

Teilenummer	6N45

Bauteilbeschribung	Fast Switching Speed

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Hersteller	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel MOSFET Transistor

6N45

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID=1mA

450

V

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID=1mA

2.0

4.0

V

VSD

Diode Forward On-Voltage

IS=3A ;VGS= 0

1.4

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID=3A

1.25

Ω

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= 360V; VGS= 0

10

µA

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

1500

pF

Crss

Reverse Transfer Capacitance

200

Coss

Output Capacitance

250

tr

Rise Time

VGS=10V;

ID=3A;

VDD=250V;

RL=50Ω

40

ns

td(on)

Turn-on Delay Time

15

tf

Fall Time

60

td(off)

Turn-off Delay Time

190

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