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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF40DM229 Datenblatt(PDF) 3 Page - Infineon Technologies AG |
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IRF40DM229 Datenblatt(HTML) 3 Page - Infineon Technologies AG |
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3 / 12 page  IRF40DM229 3 2016-3-2 D S G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 87 ––– ––– S VDS = 10V, ID = 97A Qg Total Gate Charge ––– 107 161 nC ID = 97A Qgs Gate-to-Source Charge ––– 30 ––– VDS =20V Qgd Gate-to-Drain ("Miller") Charge ––– 39 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 68 ––– td(on) Turn-On Delay Time ––– 16 ––– ns VDD = 20V tr Rise Time ––– 66 ––– ID = 30A td(off) Turn-Off Delay Time ––– 54 ––– RG = 2.7 tf Fall Time ––– 54 ––– VGS = 10V Ciss Input Capacitance ––– 5317 ––– pF VGS = 0V Coss Output Capacitance ––– 866 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 575 ––– ƒ = 1.0MHz Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1037 ––– VGS = 0V, VDS = 0V to 32V Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1237 ––– VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 83 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 636 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ= 25°C,IS = 97A, VGS = 0V dv/dt Peak Diode Recovery ––– 3.2 ––– V/ns TJ =150°C,IS = 97A,VDS = 40V trr Reverse Recovery Time ––– 26 ––– ns TJ = 25° C VR = 34V ––– 27 ––– TJ = 125°C IF = 97A Qrr Reverse Recovery Charge ––– 24 ––– TJ = 25°C di/dt = 100A/µs ––– 23 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.2 ––– A TJ = 25°C nC Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.015mH RG = 50, IAS = 97A, VGS =10V. ISD ≤ 97A, di/dt ≤ 862A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L= 0.015mH, RG = 50, IAS = 97A, VGS =10V. Limited by TJmax, starting TJ = 25°C, L = 1mH RG = 50, IAS = 18A, VGS =10V. |
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Ähnliche Beschreibung - IRF40DM229 |
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