Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1526B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1526B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE1526B P-Channel Enhancement Mode Field Effect Transistor VER 1.1 1 Description ACE1526B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features VDS (V) = -30V ID = -6A (VGS = - 10V) RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) *AC TA=25°C ID -6 A TA=70°C -4.8 Drain Current (Pulse) *B IDM -30 A Power Dissipation TA=25°C PD 50 W TA=70°C 25 Operating Temperature/ Storage Temperature T J//TSTG -55~150 ℃ Packaging Type Ordering information TO-252 ACE1526B XX + H YM : TO-252 Pb - free Halogen - free |
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