Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2006-M3 Datenblatt(PDF) 2 Page - Vishay Siliconix |
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BU2006-M3 Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 6 page BU2006-M3, BU2008-M3, BU2010-M3 www.vishay.com Vishay General Semiconductor Revision: 26-Jun-13 2 Document Number: 89298 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward voltage per diode (1) IF = 10 A TA = 25 °C VF 0.95 1.05 V TA = 125 °C 0.85 0.95 Maximum reverse current per diode rated VR TA = 25 °C IR -5.0 μA TA = 125 °C 110 350 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 95 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BU2006 BU2008 BU2010 UNIT Typical thermal resistance RJC (1) 2.4 °C/W RJA (2) 20 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BU2006-M3/45 4.76 45 20 Tube BU2006-M3/51 4.76 51 250 Paper tray BU20065S-M3/45 4.76 45 20 Tube 0 50 100 150 0 4 12 16 20 24 Case Temperature (°C) 8 25 75 125 With Heatsink Sine-Wave, R-Load T C Measured at Device Bottom T C T C 0 1 2 3 5 Ambient Temperature (°C) 0 50 25 75 100 125 150 4 Without Heatsink Sine-Wave, R-Load Free Air, T A |
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