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BC817W Datenblatt(PDF) 1 Page - Diotec Semiconductor

Teilenummer BC817W
Bauteilbeschribung  SMD General Purpose NPN Transistors
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Hersteller  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC817W Datenblatt(HTML) 1 Page - Diotec Semiconductor

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BC817W / BC818W
BC817W / BC818W
SMD General Purpose NPN Transistors
SMD Universal-PNP-Transistoren
IC
= 500 mA
hFE ~ 180/290/520
Tjmax = 150°C
VCEO = 25...45 V
Ptot = 200 mW
Version 2016-04-13
SOT-323
1 = B
2 = E
3 = C
Dimensions - Maße [mm]
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Features
General Purpose
Three current gain groups
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Universell anwendbar
Drei Stromverstärkungsklassen
Konform zu RoHS, REACH,
Konfliktmineralien 1
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
3000 / 7“
Gegurtet auf Rolle
Weight approx.
0.01 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC817W
BC818W
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
E-B short
VCES
50 V
30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
VCEO
45 V
25 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
5 V
Power dissipation – Verlustleistung
Ptot
200 mW 2)
Collector current – Kollektorstrom (dc)
IC
500 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 3)
VCE = 1 V, IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
250
400
600
VCE = 1 V, IC = 500 mA
all groups
hFE
40
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 3)
IC = 500 mA, IB = 50 mA
VCEsat
0.7 V
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
1.3
0.3
1±0.1
2±0.1
Type
Code
3
2
1


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