Datenblatt-Suchmaschine für elektronische Bauteile |
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FDS6690A Datenblatt(PDF) 6 Page - Fairchild Semiconductor |
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FDS6690A Datenblatt(HTML) 6 Page - Fairchild Semiconductor |
6 / 9 page FDS6986S Rev C1 (W) Typical Characteristics Q1 0 5 10 15 20 00.511.5 22.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) 3.0V 4.5V 2.5V 3.5V V GS = 10V 6.0V 0.75 1 1.25 1.5 1.75 2 2.25 0 5 10 15 20 ID, DRAIN CURRENT (A) VGS = 3.0V 3.5V 4.5V 6.0V 10V Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 6.5A V GS = 10V 0.015 0.025 0.035 0.045 0.055 0.065 0.075 2468 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 3.3 A T A = 125 oC TA = 25 oC Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 0 4 8 12 16 20 1.522.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) T A = -55 oC 25 oC 125 oC V DS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC V GS = 0V Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Ähnliche Teilenummer - FDS6690A |
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Ähnliche Beschreibung - FDS6690A |
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