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J108 Datenblatt(PDF) 1 Page - InterFET Corporation

Teilenummer J108
Bauteilbeschribung  N-Channel Silicon Junction Field-Effect Transistor
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Hersteller  INTERFET [InterFET Corporation]
Direct Link  http://www.interfet.com
Logo INTERFET - InterFET Corporation

J108 Datenblatt(HTML) 1 Page - InterFET Corporation

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01/99
B-49
J108, J109
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
– 25 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
360 mW
Power Derating
3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ108, SMPJ109
At 25°C free air temperature:
J108
J109
Process NJ450
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 25
– 25
V
IG = – 1 µA, VDS = ØV
Gate Reverse Current
IGSS
– 3
– 3
nA
VGS = – 15V, VDS = ØV
Gate Source Cutoff Voltage
VGS(OFF)
– 3
– 10
– 2
– 6
V
VDS = 5V, ID = 1 µA
Drain Saturation Current (Pulsed)
IDSS
80
40
mA
VDS = 15V, VGS = ØV
Drain Cutoff Current
ID(OFF)
33
nA
VDS = 5V, VGS = – 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
812
VGS = Ø, VDS < = 0.1V
f = 1 kHz
Drain Gate Capacitance
Cgd
15
15
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Source Gate Capacitance
Cgs
15
15
pF
VDS = ØV, VGS = – 10V
f = 1 MHz
Drain Gate + Source Gate Capacitance
Cgd + Cgs
85
85
pF
VDS = VGS = ØV
f = 1 MHz
Switching Characteristics
Typ
Typ
Turn ON Delay Time
td(on)
33
ns
J108
J109
Rise Time
tr
11
ns
VDD
1.5
1.5
V
Turn OFF Delay Time
td(off)
44
ns
VGS(OFF)
– 12
– 7
V
Fall Time
tf
18
18
ns
RL
150
150
¥ Choppers
¥ Commutators
¥ Analog Switches
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp
1/14/99 1:02 PM
Page B-49


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