Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF143 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF143 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF143 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 60 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A 0.11 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=60V; VGS=0 250 uA VSD Diode Forward Voltage IS=24A; VGS=0 2.5 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 1320 1600 pF Crss Reverse Transfer Capacitance 250 300 Coss Output Capacitance 600 800 tr Rise Time ID=15A; VDD=50V; RL=4.7Ω 60 ns td(on) Turn-on Delay Time 30 tf Fall Time 30 td(off) Turn-off Delay Time 80 PDF pdfFactory Pro www.fineprint.cn |
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Ähnliche Beschreibung - IRF143 |
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