Datenblatt-Suchmaschine für elektronische Bauteile |
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2N5772 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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2N5772 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2004 Fairchild Semiconductor Corporation Rev. B, October 2004 Absolute Maximum Ratings * T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continued 300 mA TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V BV(BR)CES Collector-Emitter Breakdown Voltage IC = 100µA, VBE = 0 40 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 40 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5.0 V ICBO Collector Cutoff Current VCB = 20V, IE = 0 0.5 µA ICES Collector Cutoff Current VCE = 20V, VBE = 0 VCE = 20V, VBE = 0, Ta = 65°C 0.5 3.0 µA µA IEBO Emitter Cutoff Current VEB = 5.0V, IC = 0 100 µA On Characteristics * hFE DC Current Gain VCE = 0.4V, IC = 30mA VCE = 0.5V, IC = 100mA VCE = 1.0V, IC = 300mA 30 25 15 120 VCE(sat) Collector-Emitter Saturation Voltage IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA 0.2 0.28 0.5 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA 0.73 0.95 1.2 1.7 V V V Small Signal Characteristics Ccb Collector-Base Capacitance VCB = 5.0V, IE = 0, f = 1MHz 5.0 pF Ceb Emitter-Base Capacitance VCB = 5.0V, IC = 0, f = 1MHz 8.0 pF hfe Small-Signal Current Gain IC = 300mA, VCE = 10V, f = 100MHz 3.5 2N5772 TO-92 NPN Switching Transistor • Sourced from process 22. 1. Emitter 2. Base 3. Collector 1 |
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Ähnliche Beschreibung - 2N5772 |
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