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ADC10080 Datenblatt(PDF) 4 Page - Texas Instruments

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Teilenummer ADC10080
Bauteilbeschribung  78.6 mW A/D Converter
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ADC10080
SNAS177H – JULY 2003 – REVISED MARCH 2013
www.ti.com
Table 1. PIN DESCRIPTIONS AND EQUIVALENT CIRCUITS (continued)
Pin No.
Symbol
Equivalent Circuit
Description
DIGITAL I/O
Digital clock input. The range of frequencies for this input is 20 MHz
1
CLK
to 80 MHz. The input is sampled on the rising edge of this input.
DF = “1” Two’s Complement
15
DF
DF = “0” Offset Binary
This is the standby pin. When high, this pin sets the converter into
28
STBY
standby mode. When this pin is low, the converter is in active mode.
IRS = “VDDA” 2.0 VP-P differential input range
IRS = “VSSA” 1.5 VP-P differential input range
IRS (Input Range
5
IRS = “Floating” 1.0 VP-P differential input range
Select)
If using both VIN+ and VIN- pins, (or differential mode), then the
peak-to-peak voltage refers to the differential voltage (VIN+ - VIN-).
16–20,
Digital output data. D0 is the LSB and D9 is the MSB of the binary
D0–D9
23–27
output word.
ANALOG POWER
Positive analog supply pins. These pins should be connected to a
quiet 3.0V source and bypassed to analog ground with a 0.1 µF
2, 9, 10
VDDA
monolithic capacitor located within 1 cm of these pins. A 4.7 µF
capacitor should also be used in parallel.
3, 11, 14
VSSA
Ground return for the analog supply.
DIGITAL POWER
Positive digital supply pins for the ADC10080's output drivers. This
pin should be bypassed to digital ground with a 0.1 µF monolithic
22
VDDIO
capacitor located within 1 cm of this pin. A 4.7 µF capacitor should
also be used in parallel. The voltage on this pin should never exceed
the voltage on VDDA by more than 300 mV.
The ground return for the digital supply for the output drivers. This
21
VSSIO
pin should be connected to the ground plane, but not near the
analog circuitry.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
4
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