Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF470 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF470 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor IRF470 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA 500 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 12A 0.23 Ω IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 24A; VGS= 0 1.8 V PDF pdfFactory Pro www.fineprint.cn |
Ähnliche Teilenummer - IRF470 |
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Ähnliche Beschreibung - IRF470 |
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