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ADS8506IBDW Datenblatt(Datasheet) 4 Page - TI store

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Teile-Nr. ADS8506IBDW
Beschreibung  12-BIT 40-KSPS LOW POWER SAMPLING ANALOG-TO-DIGITAL CONVERTER WITH INTERNAL REFERENCE AND PARALLEL/SERIAL INTERFACE
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DEVICE INFORMATION
VDIG
VANA
BUSY
CS
R/C
BYTE
TAG
SDATA
DATACLK
D0
D1
D2
R1IN
AGND1
CAP
REF
AGND2
D7
D6
D5
D4
D3
DGND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
ADS8506
R2IN
SB/BTC
EXT/INT
REFD
PWRD
ADS8506
SLAS484B – SEPTEMBER 2007 – REVISED DECEMBER 2007
ELECTRICAL CHARACTERISTICS (continued)
At TA = -40°C to 85°C, fS = 40 kHz, VDIG = VANA = 5 V, and using internal reference and fixed resistors, (see Figure 43) unless
otherwise specified.
ADS8506IB
ADS8506I
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
Data format - Parallel 12-bits in
2-bytes
Data coding - Serial binary 2s
complement or straight binary
VOL
Low-level output voltage
ISINK = 1.6 mA
0.4
0.4
V
VOH
High-level output voltage
ISOURCE = 500 µA
4
4
V
High-Z state,
Leakage Current
±5
±5
µA
VOUT = 0 V to VDIG
Output capacitance
High-Z state
15
15
pF
DIGITAL TIMING
Bus access time
RL = 3.3 kΩ, CL = 50 pF
83
83
ns
Bus relinquish time
RL = 3.3 kΩ, CL = 10 pF
83
83
ns
POWER SUPPLIES
VDIG
Digital I/O voltage
Must be
≤ VANA
4.75
5
5.25
4.75
5
5.25
V
VANA
ADC core voltage
4.75
5
5.25
4.75
5
5.25
V
IDIG
Digital current
0.6
0.6
mA
IANA
Analog current
4.2
4.2
mA
VANA = VDIG = 5 V,
24
30
24
30
mW
fS = 40 kHz
Power dissipation
REFD High
20
20
mW
PWRD and REFD High
50
50
µW
TEMPERATURE RANGE
Specified performance
-40
85
-40
85
°C
Derated performance
-55
125
-55
125
°C
Storage temperature
-65
150
-65
150
°C
SO
Thermal resistance (
ΘJA)
46
46
°C/W
4
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Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): ADS8506




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