Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF822FI Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF822FI Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF822FI FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 1.9 A IDM Drain Current-Single Pluse 7.6 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 80 ℃/W PDF pdfFactory Pro www.fineprint.cn |
Ähnliche Teilenummer - IRF822FI |
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Ähnliche Beschreibung - IRF822FI |
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