Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFBC42R Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRFBC42R Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRFBC42R ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=3.4A 1.6 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 250 μA VSD Forward On-Voltage IS= 6.2A; VGS= 0 1.5 V Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz 1550 pF Coss Output Capacitance 175 pF Crss Reverse Transfer Capacitance 75 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Td(on) Turn-on Delay Time VDD=300V,ID=6.2A RG=9.1Ω 13 20 ns Tr Rise Time 18 27 ns Td(off) Turn-off Delay Time 55 83 ns Tf Fall Time 20 30 ns · PDF pdfFactory Pro www.fineprint.cn |
Ähnliche Teilenummer - IRFBC42R |
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Ähnliche Beschreibung - IRFBC42R |
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