IRF630PBF datasheet(3/6 Pages) THINKISEMI

Teilenummer	IRF630PBF

Bauteilbeschribung	9A,200V Heatsink N-Channel Type Power MOSFET

Download	6 Pages

Scroll/Zoom	100%

Hersteller	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Direct Link	http://www.thinkisemi.com

Logo

3 / 6 page

0

5

10

15

20

25

0

2

4

6

8

10

12

V

DS = 50V

V

DS = 125V

V

DS = 200V

Note : I

D = 9A

Q

G, Total Gate Charge [nC]

0

5

10

15

20

25

30

35

40

0

250

500

750

1000

1250

C

iss=Cgs+Cgd(Cds=shorted)

C

oss=Cds+Cgd

C

rss=Cgd

Notes :

1. V

GS = 0V

2. f=1MHz

C

iss

C

oss

C

rss

V

DS, Drain-Source Voltage [V]

0.20.4

0.60.8

1.0

1.2

1.41.6

10

-1

10

0

10

1

150

Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25

V

SD, Source-Drain voltage [V]

0

6

12

18

24

0.0

0.5

1.0

1.5

2.0

V

GS = 20V

V

GS = 10V

Note : T

J = 25

I

D, Drain Current [A]

23

45

67

8

9

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

Notes :

1. V

DS = 30V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

0

10

1

10

-1

10

0

10

1

Notes :

1. 250μ s Pulse Test

2. T

C = 25

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom :

5.0 V

V

DS, Drain-Source Voltage [V]

Fig 4. On State Current vs.

Allowable Case Temperature

Fig 5. Capacitance Characteristics

( Non-Repetitive )

Fig 6. Gate Charge Characteristics

Fig 1. On-State Characteristics

Fig 2. Transfer Characteristics

Fig 3. On Resistance Variation vs.

Drain Current and Gate Voltage

®

IRF630PBF

http://www.thinkisemi.com/

Page 3/6

Rev.05

Ähnliche Beschreibung - IRF630PBF

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Unisonic Technologies	UF630	389Kb / 7P	200V, 9A N-CHANNEL POWER MOSFET
First Silicon Co., Ltd	BRI630	600Kb / 4P	N-Channel Power MOSFET (200V/9A)
Thinki Semiconductor Co...	IRF640PBF	1,002Kb / 6P	18A,200V Heatsink N-Channel Type Power MOSFET
Jiangsu Donghai Semicon...	630	1Mb / 11P	9A 200V N-channel Enhancement Mode Power MOSFET Rev. 1.0
Unisonic Technologies	UF630	167Kb / 8P	9A, 200V, 0.4??, N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	2N6757	141Kb / 5P	N-Channel Power MOSFETs, 9A, 150V/200V
Intersil Corporation	IRF630	62Kb / 7P	9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
International Rectifier	JANTX2N6758	236Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A)
STMicroelectronics	IRF630S	85Kb / 8P	N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET
Unisonic Technologies	9N90_1112	255Kb / 6P	9A, 900V N-CHANNEL POWER MOSFET

More results

IRF630PBF Datenblatt(PDF) 3 Page - Thinki Semiconductor Co., Ltd.

IRF630PBF Datenblatt(HTML) 3 Page - Thinki Semiconductor Co., Ltd.

Ähnliche Teilenummer - IRF630PBF

Ähnliche Beschreibung - IRF630PBF

Html Pages

1 2 3 4 5 6

Datenblatt Download

Link URL