CSD13302W_16 datasheet(1/12 Pages) TI1

Teilenummer	CSD13302W

Bauteilbeschribung	CSD13302W 12 V N Channel NexFET??Power MOSFET

Download	12 Pages

Scroll/Zoom	100%

Hersteller	TI1 [Texas Instruments]

Direct Link	http://www.ti.com

Logo

1 / 12 page

Qg - Gate Charge (nC)

0

1

2

3

4

5

6

7

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

D004

ID = 1 A

VDS = 6 V

VGS - Gate-To-Source Voltage (V)

0

1

2

3

4

5

6

7

8

0

5

10

15

20

25

30

35

D007

TC = 25°C, I D = 1 A

TC = 125°C, I D = 1 A

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

CSD13302W

SLPS535 – MARCH 2015

CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

Ultra Low On Resistance

TA = 25°C

TYPICAL VALUE

UNIT

•

Low Qg and Qgd

VDS

Drain-to-Source Voltage

12

V

•

Small Footprint 1 mm × 1 mm

Qg

Gate Charge Total (4.5 V)

6.0

nC

Qgd

Gate Charge Gate-to-Drain

2.1

nC

•

Low Profile 0.62 mm Height

VGS = 2.5 V

21.2

m

Ω

•

Pb Free

Drain-to-Source

RDS(on)

On-Resistance

VGS = 4.5 V

14.6

m

Ω

•

RoHS Compliant

VGS(th)

Threshold Voltage

1.0

V

•

Halogen Free

Ordering Information(1)

2 Applications

Device

Qty

Media

Package

Ship

•

Battery Management

CSD13302W

3000

7-Inch Reel

1.0 mm × 1.0 mm

Tape and

Wafer Level

•

Load Switch

Reel

CSD13302WT

250

7-Inch Reel

Package

•

Battery Protection

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

This 14.6 m

Ω, 12 V, N-Channel device is designed to

Absolute Maximum Ratings

deliver the lowest on resistance and gate charge in a

TA = 25°C

VALUE

UNIT

small 1 x 1 mm outline with excellent thermal

VDS

Drain-to-Source Voltage

12

V

characteristics and an ultra low profile.

VGS

Gate-to-Source Voltage

±10

V

ID

Continuous Drain Current (1)

1.6

A

Top View

IDM

Pulsed Drain Current (2)

29

A

PD

Power Dissipation (3)

1.8

W

TJ,

Operating Junction and

–55 to 150

°C

Tstg

Storage Temperature Range

(1) Device Operating at a temperature of 105ºC

(2) Min Cu Typ RθJA = 275ºC/W, Pulse width ≤100 μs, duty cycle

≤1%

(3) Max Cu Typ RθJA = 70ºC/W

RDS(on) vs VGS

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Ähnliche Beschreibung - CSD13302W_16

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Texas Instruments	CSD13302W	1Mb / 15P	[Old version datasheet] CSD13302W 12 V N Channel NexFET??Power MOSFET
	CSD83325L	639Kb / 11P	[Old version datasheet] 12 V Dual N-Channel NexFET??Power MOSFET
	CSD83325L	1Mb / 14P	[Old version datasheet] 12 V Dual N-Channel NexFET Power MOSFET
	CSD13306W	616Kb / 12P	[Old version datasheet] CSD13306W 12 V N Channel NexFET??Power MOSFET
	CSD23202W10	440Kb / 12P	[Old version datasheet] 12-V P-Channel NexFET Power MOSFET
	CSD23202W10	1,023Kb / 15P	[Old version datasheet] CSD23202W10 12-V P-Channel NexFET Power MOSFET
	CSD19532Q5B	1Mb / 13P	[Old version datasheet] 100 V N-Channel NexFET Power MOSFET
	CSD18511KTT	377Kb / 11P	[Old version datasheet] 40-V N-Channel NexFET Power MOSFET
	CSD17483F4	560Kb / 10P	[Old version datasheet] 30-V, N-Channel NexFET Power MOSFET
	CSD16327Q3	425Kb / 13P	[Old version datasheet] 25-V N-Channel NexFET Power MOSFET

More results

CSD13302W Datenblatt(PDF) 1 Page - Texas Instruments

CSD13302W Datenblatt(HTML) 1 Page - Texas Instruments

Ähnliche Teilenummer - CSD13302W_16

Ähnliche Beschreibung - CSD13302W_16

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datenblatt Download

Link URL