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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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CSD17576Q5B Datenblatt(PDF) 3 Page - Texas Instruments |
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CSD17576Q5B Datenblatt(HTML) 3 Page - Texas Instruments |
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3 / 13 page  CSD17576Q5B www.ti.com SLPS497 – JUNE 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain to Source Voltage VGS = 0 V, ID = 250 μA 30 V IDSS Drain to Source Leakage Current VGS = 0 V, VDS = 24 V 1 μA IGSS Gate to Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250 μA 1.1 1.4 1.8 V VGS = 4.5 V, ID = 25 A 2.4 2.9 m Ω RDS(on) Drain to Source On Resistance VGS = 10 V, ID = 25 A 1.7 2.0 m Ω gƒs Transconductance VDS = 3 V, ID = 25 A 120 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance 3410 4430 pF Coss Output Capacitance VGS = 0V, VDS = 15 V, ƒ = 1 MHz 389 506 pF Crss Reverse Transfer Capacitance 151 196 pF RG Series Gate Resistance 1.0 2.0 Ω Qg Gate Charge Total (4.5 V) 25 32 nC Qg Gate Charge Total (10 V) 53 68 nC Qgd Gate Charge Gate to Drain VDS = 15 V, ID = 25 A 5.4 nC Qgs Gate Charge Gate to Source 8.9 nC Qg(th) Gate Charge at Vth 4.7 nC Qoss Output Charge VDS = 30 V, VGS = 0 V 12.3 nC td(on) Turn On Delay Time 5 ns tr Rise Time 16 ns VDS = 15 V, VGS = 10 V, IDS = 25 A, RG = 0 Ω td(off) Turn Off Delay Time 23 ns tƒ Fall Time 3 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 25 A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge 14.7 nC VDS= 15 V, IF = 25 A, di/dt = 300 A/ μs trr Reverse Recovery Time 14 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance (1) 1.3 °C/W RθJA Junction-to-Ambient Thermal Resistance (1)(2) 50 (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches (3.81- cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Copyright © 2014, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD17576Q5B |
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