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CSD18504Q5A Datenblatt(PDF) 5 Page - Texas Instruments

Teilenummer CSD18504Q5A
Bauteilbeschribung  40V N-Channel NexFET Power MOSFET
Download  13 Pages
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD18504Q5A Datenblatt(HTML) 5 Page - Texas Instruments

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0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
2
4
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20
0
2
4
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20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 17A
TC = 125ºC Id = 17A
G001
0
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2
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9
10
0
2
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Qg - Gate Charge (nC)
ID = 17A
VDS = 20V
G001
10
100
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10000
0
4
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12
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40
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
0
20
40
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0
0.2
0.4
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1.2
VDS - Drain-to-Source Voltage (V)
VGS =10V
VGS =6.5V
VGS =4.5V
G001
0
20
40
60
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0
1
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
CSD18504Q5A
www.ti.com
SLPS366E – JUNE 2012 – REVISED SEPTEMBER 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
Figure 4. Gate Charge
Figure 5. Capacitance
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Copyright © 2012–2014, Texas Instruments Incorporated
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