Datenblatt-Suchmaschine für elektronische Bauteile |
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LM2619 Datenblatt(PDF) 3 Page - Texas Instruments |
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LM2619 Datenblatt(HTML) 3 Page - Texas Instruments |
3 / 21 page LM2619 www.ti.com SNVS212B – NOVEMBER 2002 – REVISED MAY 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) PVIN, VDD to SGND −0.2V to +6V PGND to SGND, PVIN to VDD −0.2V to +0.2V EN, EAOUT, EANEG, SYNC/MODE to SGND −0.2V to +6V FB, SW (GND −0.2V) to (VDD +0.2V) Storage temperature range −45°C to +150°C Lead temperature (soldering, 10 sec.) 260°C Junction temperature (2) −25°C to +125°C Minimum ESD rating (Human Body Model, C = 100 pF, R = 1.5 k Ω) ±2 kV Thermal resistance ( θJA) (3) 140°C/W (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional. For specifications and associated test conditions, see the Min and Max limits and Conditions in the Electrical Characteristics table. Typical (typ) specifications are mean or average values at 25°C. (2) Thermal shutdown will occur if the junction temperature exceeds 150°C. (3) Thermal resistance specified with 2 layer PCB (0.5/0.5 oz. cu). Electrical Characteristics Specifications with standard typeface are for TA = TJ = 25°C, and those in boldface type apply over the full Operating Temperature Range of TA = TJ = −25°C to +85°C. Unless otherwise specified, PVIN = VDD = EN = SYNC/MODE = 3.6V. Symbol Parameter Conditions Min Typ Max Unit VIN Input voltage range PVIN = VDD = VIN (1) 2.8 3.6 5.5 V VFB Feedback voltage 1.485 1.50 1.515 V VHYST PFM comparator hysteresis voltage PFM Mode (SYNC/MODE = 0V)(2) 24 mV ISHDN Shutdown supply current VIN = 3.6V, EN = 0V 0.02 3 µA IQ1_PWM DC bias current into VDD SYNC/MODE = VIN, FB = 2V 600 725 µA IQ2_PFM SYNC/MODE = 0V, FB = 2V 160 195 µA RDSON (P) Pin-pin resistance for PFET 395 550 m Ω RDSON (N) Pin-pin resistance for NFET 330 500 m Ω RDSON (TC) FET resistance temperature coefficient 0.5 %/C ILIM Switch peak current limit (3) 620 810 1100 mA VIH Logic high input, EN, SYNC/MODE 0.95 1.3 V VIL Logic low input, EN, SYNC/MODE 0.4 0.80 V FSYNC SYNC/MODE clock frequency range (4) 500 1000 kHz FOSC Internal oscillator frequency PWM Mode 468 600 732 kHz Tmin Minimum on-time of PFET switch in 200 ns PWM mode (1) The LM2619 is designed for mobile phone applications where turn-on after system power-up is controlled by the system controller. Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.8V. (2) The hysteresis voltage is the minimum voltage swing on the FB pin that causes the internal feedback and control circuitry to turn the internal PFET switch on and then off during PFM mode. When resistor dividers are used like in the operating circuit of Figure 20, the hysteresis at the output will be the value of the hysteresis at the feedback pin times the resistor divider ratio. In this case, 24mV (typ) x ((46.4k + 33.2k)/33.2k). (3) Current limit is built-in, fixed, and not adjustable. If the current limit is reached while the voltage at the FB pin is pulled below 0.7V, the internal PFET switch turns off for 2.5µs to allow the inductor current to diminish. (4) SYNC driven with an external clock switching between VIN and GND. When an external clock is present at SYNC; the IC is forced to be in PWM mode at the external clock frequency. The LM2619 synchronizes to the rising edge of the external clock. Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM2619 |
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