Datenblatt-Suchmaschine für elektronische Bauteile |
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SI4840DY Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI4840DY Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si4840DY Vishay Siliconix www.vishay.com 2-2 Document Number: 71188 S-03950—Rev. B, 16-May-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 14 A 0.0075 0.009 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 12 A 0.0095 0.012 W Forward Transconductancea gfs VDS = 15 V, ID = 14 A 50 S Diode Forward Voltagea VSD IS = 2.8 A, VGS = 0 V 0.75 1.1 V Dynamicb Total Gate Charge Qg 18.5 28 Gate-Source Charge Qgs VDS = 20 V, VGS = 5 V, ID = 14 A 6 nC Gate-Drain Charge Qgd 7.5 Gate Resistance Rg 0.2 0.8 1.2 W Turn-On Delay Time td(on) 15 30 Rise Time tr VDD = 20 V, RL = 20 W 10 20 ns Turn-Off Delay Time td(off) VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 50 100 ns Fall Time tf 20 40 Source-Drain Reverse Recovery Time trr IF = 2.8 A, di/dt = 100 A/ms 30 60 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 0 123 456 VGS = 10 thru 4 V TC = 125_C -55 _C 2 thru 0 V 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 3 V |
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