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TP0101TS Datenblatt(PDF) 3 Page - Vishay Siliconix |
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3 / 4 page TP0101T/TS Vishay Siliconix Document Number: 70229 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-3 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) –– – – On-Resistance vs. Drain Current Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 0 1 2 3 4 5 6 01 23 4 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 _C TA = –55 _C 125 _C –2.5 V –3 V VGS = –5 V –1.5 V –2 V 0 50 100 150 200 250 300 350 03 69 12 0.7 0.9 1.1 1.3 1.5 1.7 –50 0 50 100 150 0 1 2 3 4 5 6 7 0 600 1200 1800 2400 3000 0 1 2 3 4 012345 Gate Charge Qg – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V) Coss Crss Ciss VDS = –6 V ID = –0.5 A ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS = –4.5 V ID = –0.5 A TJ – Junction Temperature ( _C) VGS = –2.5 V VGS = –4.5 V –0.5, 1 V –3.5 V –4 V –4.5 V – – – – – – – – – – –– – – – – – – – – – –– –– – VGS = 0 f = 1 MHz –– – – – – – – – – |
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