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SN74V245-EP Datenblatt(PDF) 6 Page - Texas Instruments |
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SN74V245-EP Datenblatt(HTML) 6 Page - Texas Instruments |
6 / 42 page 10 100 1000 10000 100000 120 130 140 150 160 170 Operating Junction Temperature (°C) SN74V245-EP SCAS932A – DECEMBER 2012 – REVISED JANUARY 2013 www.ti.com ELECTRICAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH High-level output voltage VCC = 3 V, IOH = -2 mA 2.4 V VOL Low-level output voltage VCC = 3 V, IOL = 8 mA 0.4 V II Input current VCC = 3.6 V, VI = VCC to 0.4 V ±1 µA IOZ High-impedance output current VCC = 3.6 V, OE ≥ VIH, VO = VCC to 0.4 V ±10 µA ICC1 Supply current VCC = 3.3 V, See (1), (2) and (3) 35 mA ICC2 VCC = 3.6 V, See (1) and (4) 5 mA CIN Input capacitance VI = 0, TA = 25°C, f = 1 MHz 10 pF VO = 0, TA = 25°C, f = 1 MHz, Output COUT 10 pF deslected, (OE ≥ VIH) (1) Tested with outputs disabled (IOUT = 0). (2) RCLK and WCLK switch at 20 MHz and data inputs switch at 10 MHz. (3) Typical ICC1 = 2.04 + 0.88 × fSW + 0.02 × CL × fSW (in mA). These equations are valid under the following conditions: VCC = 3.3 V, TA = 25°C, fSW = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at fSW/2, CL = capacitive load (in pF). (4) All inputs = (VCC – 0.2 V) or (GND + 0.2 V), except RCLK and WCLK, which switch at 20 MHz. xxx (1) See datasheet for absolute maximum and minimum recommended operating conditions. (2) Silicon operating life design goal is 100,000 hrs at 106°C junction temperature (does not include package interconnect life). (3) The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the dominant failure mechanism affecting device wearout for the specific device process and design characteristics. Figure 1. Electromigration Fail Mode Derating Chart 6 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: SN74V245-EP |
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