MATCHING CHARACTERISTICS @ 25

°C (unless otherwise noted)

SYMBOL

PARAMETER

LS358

UNITS CONDITIONS

|V

BE1

-V

BE2

|

Base Emitter Voltage Differential

0.4

TYP.

mV

I

C

= 10

µAV

CE

= 5V

1

MAX.

mV

∆|(V

BE1

-V

BE2

)|/

°C

Base Emitter Voltage Differential

1

TYP.

µV/°CI

C

= 10

µAV

CE

= 5V

Change with Temperature

10

MAX.

µV/°CT

A

= -55

°C to +125°C

|I

B1

-

I

B2

|

Base Current Differential

5

MAX.

nA

I

C

= 10

µAV

CE

= 5V

|

∆(I

B1

- I

B2

)|/

°C

Base Current Differential

0.5

MAX.

nA/

°CI

C

= 10

µAV

CE

= 5V

Change with Temperature

T

A

= -55

°C to +125°C

h

FE1

/h

FE2

DC Current Gain Differential

5

TYP.

%

I

C

= 10

µAV

CE

= 5V

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.

2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10

µA.

TO-71

Six Lead

0.230

0.209

DIA.

DIA.

0.195

0.175

0.030

MAX.

0.500 MIN.

0.150

0.115

0.019

0.016

DIA.

6 LEADS

3

2

1

8

4

5

6

0.046

0.036

45°

0.048

0.028

0.100

0.050

7

TO-78

0.335

0.370

0.305

0.335

0.016

0.019

0.165

0.185

0.040

MAX.

DIM. A

0.016

0.021

DIM. B

MIN. 0.500

0.200

0.100

0.100

0.028

0.034

45°

1

2 3 4

5

6

7

8

0.029

0.045

SEATING

PLANE

C1 1

2

3

45

6

7

8

B1

E1

N/C

N/C

C2

B2

E2

P-DIP

C1 1

2

3

45

6

7

8

B1

E1

N/C

N/C

C2

B2

E2

0.150

0.158

(3.81)

(4.01)

0.188

0.197

0.228

0.244

(5.79)

(6.20)

SOIC

N/C

0.320

0.290

(8.13)

(7.37)

0.405

MAX.

(10.29)

(4.78)

(5.00)