Datenblatt-Suchmaschine für elektronische Bauteile |
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TDA8591 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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TDA8591 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 36 page 2002 Jan 14 4 Philips Semiconductors Preliminary specification 4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω quad BTL car radio power amplifier TDA8591J 4 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VP supply voltage 8.0 14.4 18.0 V Iq(tot) total quiescent current 120 200 290 mA Istb standby supply current − 250 µA Z i input impedance − 70 − k Ω Po output power THD+N= 0.5% RL =4 Ω 19 22 − W RL =2 Ω− 34 − W THD+N=10% RL =4 Ω 27 28 − W RL =2 Ω− 47 − W EAIJ values RL =4 Ω 41.5 44 − W RL =2 Ω− 75 − W V OO output offset voltage mute mode −− 30 mV DC operating mode −− 60 mV Gv voltage gain Vi = 40 mV (RMS) 25 26 27 dB THD + N total harmonic distortion plus noise Po = 1 W; f = 1 kHz; RL =4 Ω− 0.03 0.1 % α cs channel separation Vi = 40 mV (RMS); Rs =0 Ω 56 68 − dB Vn(o) noise output voltage Rs =0 Ω; see Fig.29 − 70 −µV SVRR supply voltage ripple rejection Vripple = 2 V (p-p); mute or operating mode; Rs =0 Ω; see Fig.29 54 68 − dB |
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