FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC DO--27,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.041 ounces,1.15 grams

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

SB330

SB340

SB350

SB360

SB370 UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard rectified current

9.5mm lead length,

(see fig.1)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

@T

Maximum reverse current

@T

at rated DC blocking voltage @T

Typical junction capacitance

(Note2)

pF

Typical thermal resistance

(Note3)

/W

Operating junction temperature range

Storage temperature range

80.0

3.0

SB320

20

30

40

50

60

70

14

21

28

35

42

49

20

30

40

50

60

70

SB320---SB370

A

3.Thermal resistance junction to ambient

mA

V

0.5

0.74

20.0

10.0

0.5

-55 --- +125

NOTE: 1. Pulse test : 300

s pulse width,1% duty cy cle.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

A

40

-55 --- +150

40

Maximum instantaneous forw ard voltage

@ 3.0 A (Note 1)

-55 --- +150

For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 70 V

CURRENT: 3.0 A

DO - 27

The plastic material carries U/L recognition 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr