Datenblatt-Suchmaschine für elektronische Bauteile |
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TS5A23157DGSR Datenblatt(PDF) 4 Page - Texas Instruments |
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TS5A23157DGSR Datenblatt(HTML) 4 Page - Texas Instruments |
4 / 16 page TS5A23157 10 W SPDT ANALOG SWITCH SCDS165 − MAY 2004 www.ti.com 4 ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (V+ = 3 V to 3.6 V; TA = −40 °C to 85 °C) (unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP† MAX UNIT ANALOG SWITCH Analog signal range VCOM, VNO, VNC 0 V+ V ON resistance ron 0 ≤ VNO or VNC ≤ V+, ICOM = −24 mA, Switch ON, see Figure 10 Full 3 V 18 Ω ON-resistance match between channels ∆ron VNO or VNC = 2.1 V, ICOM = −24 mA, Switch ON, see Figure 10 25 °C 3 V 0.2 Ω ON-resistance flatness ron(flat) 0 ≤ VNO or VNC ≤ V+, ICOM = −24 mA, Switch ON, see Figure 12 25 °C 3 V 9 Ω NC, NO INC(OFF), VNC or VNO = 0 to V+, Switch OFF, 25 °C 3.6 V −1 0.05 1 A NC, NO OFF leakage current INC(OFF), INO(OFF) VNC or VNO = 0 to V+, VCOM = 0 to V+, Switch OFF, see Figure 11 Full 3.6 V −1 1 µA NC, NO INC(ON), VNC or VNO = 0 to V+, Switch ON, 25 °C 3.6 V −0.1 0.1 A NC, NO ON leakage current INC(ON), INO(ON) VNC or VNO = 0 to V+, VCOM = Open, Switch ON, see Figure 11 Full 3.6 V −1 1 µA COM ICOM(ON) VNC or VNO = Open, Switch ON, 25 °C 3.6 V −0.1 0.1 A COM ON leakage current ICOM(ON) VNC or VNO = Open, VCOM = 0 to V+, Switch ON, see Figure 11 Full 3.6 V −1 1 µA DIGITAL INPUTS (IN1, IN2) (see Note 1) Input logic high VIH Full V+ × 0.7 V Input logic low VIL Full V+ × 0.3 V Input leakage IIH, IIL VIN = 5.5 V or 0 25 °C 3.6 V −1 0.05 1 A Input leakage current IIH, IIL VIN = 5.5 V or 0 Full 3.6 V −1 1 µA DYNAMIC Turnon time tON VNC = GND and VNO = V+ or VNC = V+ and VNO = GND, RL = 500 Ω, CL = 50 pF, see Figure 13 Full 3 V to 3.6 V 2.5 7.6 ns Turnoff time tOFF VNC = GND and VNO = V+ or VNC = V+ and VNO = GND, RL = 500 Ω, CL = 50 pF, see Figure 13 Full 3 V to 3.6 V 1.5 5.3 ns Break-before-make time tBBM VNC = VNO = V+/2, RL = 50 Ω, CL = 35 pF, see Figure 14 Full 3 V to 3.6 V 0.5 ns Charge injection QC RL = 1 MΩ, CL = 0.1 nF, see Figure 18 25 °C 3.3 V 3 pC Bandwidth BW RL = 50 Ω, Switch ON, see Figure 15 25 °C 3 V 220 MHz OFF isolation OISO RL = 50 Ω, f = 10 MHz, Switch OFF, see Figure 16 25 °C 3 V −65 dB Crosstalk XTALK RL = 50 Ω, f = 10 MHz, Switch ON, see Figure 17 25 °C 3 V −66 dB Total harmonic distortion THD RL = 600 Ω, CL = 50 pF, f = 600 Hz to 20 kHz, see Figure 19 25 °C 3 V 0.015 % SUPPLY Positive I+ VIN = V+ or GND, Switch ON or OFF 25 °C 3.6 V 1 A Positive supply current I+ VIN = V+ or GND, Switch ON or OFF Full 3.6 V 10 µA Change in supply current ∆I+ VIN = V+ − 0.6 V Full 3.6 V 500 µA † TA = 25°C (1) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. |
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