Datenblatt-Suchmaschine für elektronische Bauteile |
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SM518 Datenblatt(PDF) 1 Page - Diode Semiconductor Korea |
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SM518 Datenblatt(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page SOLDERABLE ENDS D2 D2=D1 +0 -0.20 0.5± 0.1 0.5± 0.1 4.9± 0.2 FEATURES ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction MECHANICAL DATA ◇ Case:JEDEC DO-213AB,molded plastic over passivated chip ◇ Terminals:Solder Plated, solderable per MIL-STD-750, Method 2026 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.0046 ounces, 0.116 gram ◇ Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. 513 516 518 2000 Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forword rectified current TA=75℃ Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at 1.0A VF V Maximum DC reverse current @TA=25℃ at rated DC blockjing voltage @TA=125℃ Typical junction capacitance (NOTE 1) Cj pF Typical thermal resistance (NOTE 2) RjθL ℃/W Typical thermal resistance (NOTE 3) RjθA ℃/W Operating temperature range Tj ℃ Storage temperature range TSTG ℃ 2. Thermal resistance junction to lead, 6.0 mm 2 coppeer pads to each terminal. 3. Thermal resistance junction to ambient, 6.0 mm 2 coppeer pads to each terminal. REVERSE VOLTAGE: 1300-2000V IFSM 1.1 SM SM SM - 55 --- + 175 A CURRENT: 1.0 A DO - 213AB 910 1120 1260 1400 1300 1600 1800 2000 SURFACE MOUNT RECTIFIER S μA 15 SM513 --- SM2000 40 20 50 UNITS SM 50 1300 1600 1800 2000 5.0 NOTES:1. Measured at 1.0MHz and applied average voltage of 4.0V DC. A IR - 55 --- + 175 I(AV) 1.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
Ähnliche Teilenummer - SM518 |
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Ähnliche Beschreibung - SM518 |
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