Datenblatt-Suchmaschine für elektronische Bauteile |
|
FQPF15P12 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
|
FQPF15P12 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page Rev. A, December 2003 ©2003 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.0mH, IAS = -15A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -15A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA -120 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- -0.13 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -120 V, VGS = 0 V -- -- -1 µA VDS = -96 V, TC = 150°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -7.5 A -- 0.17 0.2 Ω gFS Forward Transconductance VDS = -40 V, ID = -7.5 A (Note 4) -- 9.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 850 1100 pF Coss Output Capacitance -- 310 400 pF Crss Reverse Transfer Capacitance -- 110 140 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -60 V, ID = -15 A, RG = 25 Ω (Note 4, 5) -- 15 40 ns tr Turn-On Rise Time -- 100 210 ns td(off) Turn-Off Delay Time -- 80 170 ns tf Turn-Off Fall Time -- 80 170 ns Qg Total Gate Charge VDS = -96 V, ID = -15 A, VGS = -10 V (Note 4, 5) -- 29 38 nC Qgs Gate-Source Charge -- 5.1 -- nC Qgd Gate-Drain Charge -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -15 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -60 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -15 A -- -- -4.0 V trr Reverse Recovery Time VGS = 0 V, IS = -15 A, dIF / dt = 100 A/µs (Note 4) -- 126 -- ns Qrr Reverse Recovery Charge -- 0.61 -- µC |
Ähnliche Teilenummer - FQPF15P12 |
|
Ähnliche Beschreibung - FQPF15P12 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |