Datenblatt-Suchmaschine für elektronische Bauteile |
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AM90N06-09B Datenblatt(PDF) 1 Page - Analog Power |
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AM90N06-09B Datenblatt(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM90N06-09B N-Channel 60-V (D-S) MOSFET VDS (V) ID (A) Symbol Limit Units VDS 60 VGS ±20 Continuous Drain Current TC=25°C ID 90 IDM 260 Continuous Source Current (Diode Conduction) TC=25°C IS 110 A Power Dissipation TC=25°C PD 300 W TJ, Tstg -55 to 150 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Pulse width limited by maximum junction temperature Pulsed Drain Current a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A PRODUCT SUMMARY 60 rDS(on) (mΩ) 9 @ VGS = 10V 10.5 @ VGS = 4.5V 90 a Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM90N06-09B_1A |
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