AM6923P datasheet(1/5 Pages) ANALOGPOWER

Teilenummer	AM6923P

Bauteilbeschribung	Dual P-Channel 12-V (D-S) MOSFET

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AM6923P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM6923_C

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

Dual P-Channel 12-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

TSSOP-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol Maximum Units

VDS

-12

VGS

±8

TA=25

oC-5.7

TA=70

oC-4.7

IDM

-10

IS

±1.6

A

TA=25

oC1.15

TA=70

oC0.7

TJ, Tstg -55to150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTEMAXIMUMRATINGS(TA = 25

oCUNLESSOTHERWISENOTED)

Parameter

PulsedDrainCurrent

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous DrainCurrent

a

ID

A

Power Dissipation

a

PD

OperatingJunctionandStorage Temperature Range

W

Symbol

Typ

Max

t <= 10 sec

93

110

Steady State

130

150

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

a

oC/W

RthJA

Parameter

S

2

D

2

G

2

P-Channel MOSFET

S

1

D

1

P-Channel MOSFET

G

1

TSSOP-8

Top View

D1

S1

1

2

3

4

G1

D2

S2

8

7

6

5

G2

VDS (V)

rDS(on) (OHM)

ID (A)

0.022 @VGS=-4.5V

-5.7

0.027 @VGS=-2.5V

-4.9

0.032 @VGS=-1.8V

-4.0

-12

PRODUCTSUMMARY

Ähnliche Beschreibung - AM6923P

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